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| NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general-purpose amplifier and low-frequency switching applications. Features: D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector-Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built-In Base-Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.915W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter SustainingVoltage Collector Cutoff Current VCEO(sus) IC = 100mA, IB = 0 ICEO ICEX VCE = 50V, IE = 0 VCE = 100V, VBE(off) = 1.5V VCE = 100V, VBE(off) = 1.5V, TA = +150C Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain hFE VCE = 3V, IC = 10A VCE = 3V, IC = 20A Collector-Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 40mA IC = 20A, IB = 200mA Base-Emitter Saturation Voltage Base-Emitter ON Voltage Dynamic Characteristics Small-Signal Current Gain Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio Output Capacitance NTE251 NTE252 hfe |hfe| VCE = 3V, IC = 10A, f = 1kHz VCE = 3V, IC = 10A, f = 1MHz 300 4.0 - - - - MHz VBE(sat) VBE(on) IC = 20A, IB = 200mA VCE = 3V, IC = 10A 750 100 - - - - - - - - - - 18000 - 2.0 3.0 4.0 2.8 V V V V IEBO VBE = 5V, IC = 0 100 - - - - - - - - - - 1.0 0.5 5.0 2.0 V mA mA mA mA Symbol Test Conditions Min Typ Max Unit Cob VCB = 10V, IE = 0, f = 0.1MHz - - - - 400 600 pF Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% Schematic Diagram C B B C E E NPN PNP .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE251
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